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2SD871 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD871 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD871 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200m A;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A B 5.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A B 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 μA hFE DC current gain IC=1A ; VCE=5V 8 VF Diode forward voltage IF=6A 2.0 V fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF tf Fall time IC=5A;IB1end=1A 1.0 μs 2 |
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