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2SD871 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD871 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD871 DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage Fig.1 simplified outline (TO-3) and symbol APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-collector voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 6 A IE Emitter current -6 A PT Total power dissipation TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
类似零件编号 - 2SD871 |
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类似说明 - 2SD871 |
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