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LPC2158 数据表(PDF) 35 Page - NXP Semiconductors

部件名 LPC2158
功能描述  Single-chip 16-bit/32-bit microcontrollers 512 kB flash, with 32 segment x 4 LCD driver
PDF  45 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

LPC2158 数据表(HTML) 35 Page - NXP Semiconductors

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LPC2157_2158_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 9 February 2009
35 of 45
NXP Semiconductors
LPC2157/2158
Single-chip 16-bit/32-bit microcontrollers
[1]
The ADC is monotonic, there are no missing codes.
[2]
The differential linearity error (ED) is the difference between the actual step width and the ideal step width. See Figure 7.
[3]
The integral non-linearity (EL(adj)) is the peak difference between the center of the steps of the actual and the ideal transfer curve after
appropriate adjustment of gain and offset errors. See Figure 7.
[4]
The offset error (EO) is the absolute difference between the straight line which fits the actual curve and the straight line which fits the
ideal curve. See Figure 7.
[5]
The gain error (EG) is the relative difference in percent between the straight line fitting the actual transfer curve after removing offset
error, and the straight line which fits the ideal transfer curve. See Figure 7.
[6]
The absolute error (ET) is the maximum difference between the center of the steps of the actual transfer curve of the non-calibrated ADC
and the ideal transfer curve. See Figure 7.
[7]
See Figure 8.
Table 8.
ADC static characteristics
VDDA = 2.5 V to 3.6 V; Tamb = −40 °C to +85 °C unless otherwise specified; ADC frequency 4.5 MHz.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIA
analog input voltage
0
-
VDDA
V
Cia
analog input capacitance
-
-
1
pF
ED
differential linearity error
VSSA =0V, VDDA = 3.3 V
[1][2] --
±1
LSB
EL(adj)
integral non-linearity
VSSA =0V, VDDA = 3.3 V
[3] --
±2
LSB
EO
offset error
VSSA =0V, VDDA = 3.3 V
[4] --
±3
LSB
EG
gain error
VSSA =0V, VDDA = 3.3 V
[5] --
±0.5
%
ET
absolute error
VSSA =0V, VDDA = 3.3 V
[6] --
±4
LSB
Rvsi
voltage source interface
resistance
[7] --40
k



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