2SC4115S datasheet(1/2 Pages) SECOS

部件名	2SC4115S

功能描述	NPN Silicon General Purpose Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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Elektronische Bauelemente

2SC4115S

NPN Silicon

General Purpose Transistor

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

4.0±0.2

1.5±0.2

2.54±0.1

(1.27 Typ.)

0.46+0.1

–0.1

0.43+0.08

–0.07

1

1: Emitter

2: Collector

3: Base

2

3

0.76±0.1

FEATURES

Power dissipation

PD:

0.3 W (Tamb=25 )

Collector current

ICM:

3 A

Collector-base voltage

V(BR)CBO: 40 V

Operating and storage junction temperature range

T

J

, Tstg: -55

to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 50µA , IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 1 mA , IB=0

20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=50µA, IC=0

6

V

Collector cut-off current

ICBO

VCB=30V , IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 5V , IC=0

0.1

µA

DC current gain

hFE

VCE=2 V, IC= 0.1A

120

560

Collector-emitter saturation voltage*

VCEsat

IC= 2A,

IB=0.1A

0.5

V

Transition frequency

fT

VCE=2V, IC=0.5 A

F=100MHz

200

MHz

Measured Using Pulse Current

CLASSIFICATION OF hFE

Rank

Q

R

S

Range

120-270

180-390

270-560

TO-92S

01-Jun-2002 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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