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2SC4115S 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 2SC4115S
功能描述  NPN Silicon General Purpose Transistor
PDF  2 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

2SC4115S 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  2SC4115S Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2SC4115S Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
2SC4115S
NPN Silicon
General Purpose Transistor
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1
Grounded emitter propagation
characteristics
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE
=2V
25
°C
−40°C
Ta
=100°C
0
0.4
0.8
1.2
1.6
2
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2
Grounded emitter output
characteristics ( )
8mA
6mA
4mA
2mA
20mA
18mA
16mA
14mA
12mA
10mA
Ta
=25°C
IB
=0A
0
1
2
3
4
5
012345
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3
Grounded emitter output
characteristics (
)
Ta
=25°C
IB
=0A
35mA
30mA
25mA
20mA
15mA
10mA
5mA
40mA
45mA
50mA
COLLECTOR CURRENT : IC
(A)
Fig.6
Collector-emitter
saturation voltage vs.
collector current ( )
1m
2m
5m
0.01
0.01
1m 2m 5m
0.02 0.05
0.02
0.05
0.5
0.2
0.1
0.1
1
0.2
10
25
0.5
1
lC/lB
=20
25
°C
−40°C
Ta
=100°C
2
2m
5m
10m
20m
50m
0.1
0.2
0.5
1
2m 5m10m20m50m0.1 0.2 0.5 1 2
5 10
1m
COLLECTOR CURRENT : IC
(A)
Fig.5
Collector-emitter
saturation voltage vs.
collector current ( )
IC/IB
=10
Ta
=100°C
25
°C
−40°C
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m 0.010.02 0.05 0.10.2 0.5 1
2
5 10
VCE
=2V
25
°C
−40°C
Ta
=100°C
COLLECTOR CURRENT : IC
(A)
Fig.4
DC current gain vs.
collector current
2
2m
5m
10m
20m
50m
0.1
0.2
0.5
1
COLLECTOR CURRENT : IC
(A)
Fig.7
Collector-emitter
saturation voltage vs.
collector current (
)
2m 5m10m20m50m
0.2 0.5 1 2
5 10
1m
0.1
IC/IB
=20
Ta
=100°C
25
°C
−40°C
−5
−2
−1
−10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : IE
(mA)
Fig.8
Gain bandwidth product vs.
emitter current
1000
500
200
100
50
20
10
5
2
1
Ta
=25°C
VCE
=2V
10
20
50
100
200
500
1000
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB
(V)
EMITTER TO BASE VOLTAGE : VEB
(V)
Fig.9
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cob
Cob
Ta
=25°C
f
=1MHz
IE
=0A
IC
=0A
Electrical characteristic curves
01-Jun-2002 Rev. A
Page
2 of 2



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