THMC10SSOPDBQ datasheet(4/20 Pages) TI

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THMC10

REMOTE/LOCAL TEMPERATURE MONITOR

WITH SMBus INTERFACE

SLIS089 – DECEMBER 1999

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

dc electrical characteristics, VDD = 3.3 V, TA = 25°C (unless otherwise noted)

A/D and supply

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

T(RES)

Temperature resolution

No missed codes

°C

T(ERR1)

Initial temperature error from internal

TA = 60°C to 100°C

–2

°C

T(ERR1)

diode

TA = full range

–3

°C

T(ERR2)

Initial temperature error from external

TA = 60°C to 100°C

–2.5

2.5

°C

T(ERR2)

diode (see Note 2)

TA = full range

–3.5

3.5

°C

V(UVLOCK)

Under voltage lockout voltage

VDD input, disables acquisition, rising edge

2.65

2.8

2.95

V(POR)

Power-up reset threshold

On VDD input, falling edge

2.25

2.5

I(DD STANDBY)

VDD standby supply current

Logic inputs forced to VDD or GND,

STBY mode, SMBus is static

µA

I(DD,STANDBY)

VDD standby supply current

Logic inputs forced to VDD or GND,

STBY mode, SCLK = 10 kHz

µA

IDD

VDD operating supply current (aver-

aged over 4 seconds in auto acquire

Slow auto-aquire rate (0.25 samples/sec)

µA

IDD

aged over 4 seconds in auto-acquire

mode)

Fast auto-aquire rate (2 samples/sec)

180

µA

V(D,SOURCE)

DXN source voltage

0.7

I(DLEAK)

DXP and DXN leakage current

STBY = 0, DXP = DXN = 0

µA

I(ADD,BIAS)

Add {0:1} bias current

Momentary on power up

100

µA

I(DIODE)

Diode source current

DXP = 1.5 V, high level

100

µA

I(DIODE)

Diode source current

DXP = 1.5 V, low level

µA

I(RATIO)

Diode source current ratio

DXP

+ 1.5 V,

high level

low level

9.7

10.2

BasedonT(

°C) +

nk [ln(10)]

* 273

Where

q = 1.6

× 10–19

(charge)

n = 1.0085

(diode ideality factor)

k = 1.38

× 10–23

(Boltzman’s constant)

NOTE 2:

SMBus

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

VIH

Input high voltage

2.2

VIL

Input low voltage

0.8

IOL1

SMBus output low current

SDATA = 0.6 V

IOL2

ALERT output low current

ALERT = 0.4 V

SMBus input current

–1

µA

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