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TLV2211CDBV 数据表(PDF) 2 Page - Texas Instruments |
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TLV2211CDBV 数据表(HTML) 2 Page - Texas Instruments |
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2 / 29 page ![]() TLV2211, TLV2211Y Advanced LinCMOS ™ RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS SLOS156B – MAY 1996 – REVISED JANUARY 1997 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. Additional care should be exercised to prevent VDD+ supply-line transients under powered conditions. Transients of greater than 20 V can trigger the ESD-protection structure, inducing a low-impedance path to VDD–/GND. Should this condition occur, the sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a latched condition and device failure. |
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