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TLV2211CDBV 数据表(PDF) 2 Page - Texas Instruments

部件名 TLV2211CDBV
功能描述  Advanced LinCMOSE RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
PDF  29 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

TLV2211CDBV 数据表(HTML) 2 Page - Texas Instruments

  TLV2211CDBV Datasheet HTML 1Page - Texas Instruments TLV2211CDBV Datasheet HTML 2Page - Texas Instruments TLV2211CDBV Datasheet HTML 3Page - Texas Instruments TLV2211CDBV Datasheet HTML 4Page - Texas Instruments TLV2211CDBV Datasheet HTML 5Page - Texas Instruments TLV2211CDBV Datasheet HTML 6Page - Texas Instruments TLV2211CDBV Datasheet HTML 7Page - Texas Instruments TLV2211CDBV Datasheet HTML 8Page - Texas Instruments TLV2211CDBV Datasheet HTML 9Page - Texas Instruments Next Button
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TLV2211, TLV2211Y
Advanced LinCMOS
™ RAIL-TO-RAIL
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS
SLOS156B – MAY 1996 – REVISED JANUARY 1997
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
description (continued)
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under
MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may
result in degradation of the device parametric performance. Additional care should be exercised to prevent
VDD+ supply-line transients under powered conditions. Transients of greater than 20 V can trigger the
ESD-protection structure, inducing a low-impedance path to VDD–/GND. Should this condition occur, the
sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a
latched condition and device failure.



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