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ACST10 数据表(PDF) 4 Page - STMicroelectronics |
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ACST10 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Characteristics ACST10 4/12 Figure 2. Maximum power dissipation vs. rms on-state current (full cycle) Figure 3. On-state rms current vs. case temperature (full cycle) P(W) 0 1 2 3 4 5 6 7 8 9 10 11 12 01 2 3 456 7 8 9 10 I(A) T(RMS) I (A) T(RMS) 0 1 2 3 4 5 6 7 8 9 10 11 0 25 50 75 100 125 TO-220FPAB TO-220AB T (°C) C Figure 4. On-state rms current vs. ambient temperature (free air convection full cycle) Figure 5. Relative variation of thermal impedance vs. pulse duration I (A) T(RMS) 0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 25 50 75 100 125 Tamb(°C) K=[Z /R ] th th 1.0E-02 1.0E-01 1.0E+00 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Z th(j-a) TO -220AB TO-220FPAB TO-220AB TO-220FPAB tp(s) Z th(j-c) Figure 6. On-state characteristics (maximal values) Figure 7. Non repetitive surge peak on-state current vs. number of cycles (Tj initial = 25 °C) I (A) TM 1 10 100 012 345 T j=25 °C T j=125 °C T j max : V to = 0.90 V R d = 35 mΩ V TM(V) I (A) TSM 0 10 20 30 40 50 60 70 80 90 100 110 1 10 100 Non repetitive Tj initial=25 °C One cycle t=20ms Repetitive TC=105 °C Number of cycles |
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