ACST10 datasheet(5/12 Pages) STMICROELECTRONICS

5 / 12 page

ACST10

Characteristics

5/12

Figure 8.

Non repetitive surge peak on-state

current for a sinusoidal pulse and

corresponding value of I²t

Figure 9.

Relative variation of gate triggering

current (IGT) and gate triggering

voltage vs. junction temperature

(A), I t (A s)

TSM

100

1000

10000

0.01

0.10

1.00

10.00

j initial=25 °C

dI/dt limitation: 100 A/µs

TSM

I²t

t (ms)

I , V ,[T /I [T = 25 °C]

jGT

T (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

100

125

IQ3

I Q1-Q2

V Q1-Q2-Q3

Figure 10.

Relative variation of holding (IH)

and latching current (IL) vs.

junction temperature

Figure 11.

Relative variation of critical rate of

decrease of main current (di/dt)c

vs. (dV/dt)c

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

100

125

I ,I [T ]/I ,I [T = 25 °C]

T (°C)

Typical values

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

100

(di/dt)c [(dV/dt)c] / Specified (di/dt)c

(dV/dt)c (V/µs)

ACST10-7Cxx

ACST10-7Sxx

Figure 12.

Relative variation of critical rate of

decrease of main current (di/dt)c

vs. junction temperature

Figure 13.

Relative variation of static dV/dt vs.

junction temperature

(dI/dt)c[T ] /

(dI/dt)c[T =125°C]

Tj(°C)

100

125

j(°C)

100

125

V= V= 460 V

(dV/dt)[T ] / (dV/dt)[T = 125 °C]

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