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APTGT50TL60T3G 数据表(PDF) 3 Page - Microsemi Corporation

部件名 APTGT50TL60T3G
功能描述  Three level inverter Trench Field Stop IGBT Power Module
PDF  7 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTGT50TL60T3G 数据表(HTML) 3 Page - Microsemi Corporation

  APTGT50TL60T3G Datasheet HTML 1Page - Microsemi Corporation APTGT50TL60T3G Datasheet HTML 2Page - Microsemi Corporation APTGT50TL60T3G Datasheet HTML 3Page - Microsemi Corporation APTGT50TL60T3G Datasheet HTML 4Page - Microsemi Corporation APTGT50TL60T3G Datasheet HTML 5Page - Microsemi Corporation APTGT50TL60T3G Datasheet HTML 6Page - Microsemi Corporation APTGT50TL60T3G Datasheet HTML 7Page - Microsemi Corporation  
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APTGT50TL60T3G
www.microsemi.com
3- 7
CR1 to CR4 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
µA
IF
DC Forward Current
Tc = 80°C
30
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 30A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
1.5
Qrr
Reverse Recovery Charge
Tj = 150°C
3.1
µC
Tj = 25°C
0.34
Err
Reverse Recovery Energy
IF = 30A
VR = 300V
di/dt =1800A/µs
Tj = 150°C
0.75
mJ
RthJC
Junction to Case Thermal Resistance
2.45
°C/W
CR5 & CR6 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
150
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 150°C
350
µA
IF
DC Forward current
Tc = 80°C
50
A
Tj = 25°C
1.6
2
VF
Diode Forward Voltage
IF = 50A
VGE = 0V
Tj = 150°C
1.5
V
Tj = 25°C
100
trr
Reverse Recovery Time
Tj = 150°C
150
ns
Tj = 25°C
2.6
Qrr
Reverse Recovery Charge
Tj = 150°C
5.4
µC
Tj = 25°C
0.60
Err
Reverse Recovery Energy
IF = 50A
VR = 300V
di/dt =1800A/µs
Tj = 150°C
1.20
mJ
RthJC
Junction to Case Thermal Resistance
1.42
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
∆R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
∆B/B
TC=100°C
4
%
⎥
⎦
⎤
⎢
⎣
⎡
⎟⎟
⎠
⎞
⎜⎜
⎝
⎛
−
=
T
T
B
R
R
T
1
1
exp
25
85
/
25
25
T: Thermistor temperature
RT: Thermistor value at T



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