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MT5C1001DCJ-25L/XT 数据表(PDF) 4 Page - Austin Semiconductor

部件名 MT5C1001DCJ-25L/XT
功能描述  1M x 1 SRAM SRAM MEMORY ARRAY
PDF  13 Pages
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制造商  AUSTIN [Austin Semiconductor]
网页  http://www.austinsemiconductor.com
标志 AUSTIN - Austin Semiconductor

MT5C1001DCJ-25L/XT 数据表(HTML) 4 Page - Austin Semiconductor

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SRAM
SRAM
SRAM
SRAM
SRAM
MT5C1001
Limited Availability
MT5C1001
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < T
C < 125
oC; V
CC = 5V +10%)
MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
READ CYCLE
READ cycle time
tRC
20
25
35
45
ns
Address access time
tAA
20
25
35
45
ns
Chip Enable access time
tACE
20
25
35
45
ns
Output hold from address change
tOH
3333
ns
Chip Enable to output in Low-Z
tLZCE
3
3
3
3
ns
4, 6, 7
Chip disable to output in High-Z
tHZCE
8
101515
ns
4, 6, 7
Chip Enable to power-up time
tPU
0000
ns
4
Chip disable to power-down time
tPD
20
25
35
45
ns
4
WRITE CYCLE
WRITE cycle time
tWC
20
25
35
45
ns
Chip Enable to end of write
tCW
15
16
20
25
ns
Address valid to end of write
tAW
15
16
20
25
ns
Address setup time
tAS
0000
ns
Address hold from end of write
tAH
1111
ns
WRITE pulse width
tWP
15
16
20
25
ns
Data setup time
tDS
8
101315
ns
Data hold time
tDH
0000
ns
Write disable to output in Low-Z
tLZWE
3333
ns
7
Write Enable to output in High-Z
tHZWE
0
9
0
10013013
ns
4, 6, 7
-35
-45
DESCRIPTION
-20
SYMBOL
-25



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