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SP3T AlGaAs PIN Diode Switch

Rev. V5

MA4AGSW3

• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400

• India Tel: +91.80.43537383

• China Tel: +86.21.2407.1588

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

FEATURES

technology.

DESCRIPTION

M/A-COM’s MA4AGSW3 is an Aluminum-Gallium-

Arsenide, single pole, triple throw (SP3T), PIN diode

switch. The switch features enhanced AlGaAs anodes

which are formed using M/A-COM’s patented hetero-

junction technology. AlGaAs

technology produces a

switch with less loss than a device fabricated using

conventional GaAs processes. As much as a 0.3 dB

reduction in insertion loss can be realized at 50 GHz.

This device is fabricated on an OMCVD epitaxial wafer

using a process designed for high device uniformity

and extremely low parasitics. The diodes within the

chip exhibit low series resistance, low capacitance,

and fast switching speed. They are fully passivated

with silicon nitride and have an additional polymer

layer for scratch protection. The protective coating

diode junction and the chip anode air-bridges. Off chip

bias circuitry is required.

APPLICATIONS

The high electron mobility of AlGaAs and the low

capacitance of the PIN diodes used makes this switch

ideal for fast response, high frequency, multi-throw

switch designs where the series capacitance in each

off-arm will load the input. AlGaAs PIN diode switches

are an ideal choice for switching arrays in radar

systems, radiometers, test equipment and other multi-

assembly components.

Yellow areas indicate bond pads

Absolute Maximum Ratings

Parameter

Maximum Rating

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Incident C.W. RF Power

+23dBm C.W.

Breakdown Voltage

25V

Bias Current

± 25mA

Junction Temperature

+175°C

Maximum combined operating conditions for RF Power, D.C.

bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @

+85°C.

* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.