• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

HMIC™ Silicon PIN Diode Switches

RoHS Compliant

Rev. V7

MA4SW110

MA4SW210

MA4SW310

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

♦ Broad Bandwidth

♦ Specified from 50 MHz to 20 GHz

♦ Usable from 50 MHz to 26.5 GHz

♦ Lower Insertion Loss and Higher Isolation than

Comparable pHempt Designs

♦ Rugged Fully Monolithic, Glass Encapsulated

Chip with Polymer Protection Coating

♦ Up to +30dBm C.W. Power Handling @ +25°C

Description

The MA4SW110, MA4SW210 and MA4SW310 are

broadband monolithic switches using series and

shunt connected silicon PIN diodes. They are

designed

for

use

as

moderate

signal,

high

performance switches in applications up to 26.5GHz.

They provide performance levels superior to those

realized by hybrid MIC designs incorporating beam

lead and PIN chip diodes that require chip and wire

assembly.

These switches are fabricated using M/A-COM’s

patented HMIC

Circuit) process, US Patent 5,268,310. This process

allows the incorporation of silicon pedestals that

form series and shunt diodes or vias by imbedding

them in low loss, low dispersion glass. By using

small spacing between elements, this combination of

silicon and glass gives HMIC devices low loss and

high isolation performance through low millimeter

frequencies.

Large bond pads facilitate the use of low inductance

ribbon leads, while gold backside metallization

allows for manual or automatic chip bonding via

80/20 , AuSn solder or conductive Ag epoxy.

Parameter

Absolute Maximum

Operating Temperature

-65

Storage Temperature

-65

Junction Temperature

+175

Applied Reverse Voltage

- 50V

RF C.W. Incident Power

+30dBm C.W.

Bias Current +25°C

± 20mA

MA4SW110

Max. operating conditions for a combination of

RF power, D.C. bias and temperature:

+30dBm CW @ 15mA (per diode) @+85°C

MA4SW210

MA4SW310