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MCP6021 数据表(PDF) 4 Page - Microchip Technology |
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MCP6021 数据表(HTML) 4 Page - Microchip Technology |
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4 / 42 page  MCP6021/1R/2/3/4 DS21685D-page 4 © 2009 Microchip Technology Inc. AC ELECTRICAL CHARACTERISTICS MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL =10kΩ to VDD/2 and CL = 60 pF. Parameters Sym Min Typ Max Units Conditions Power Supply Supply Voltage VDD 2.5 — 5.5 V Quiescent Current per Amplifier IQ 0.5 1.0 1.35 mA IO = 0 AC Response Gain Bandwidth Product GBWP — 10 — MHz Phase Margin PM — 65 — ° G = +1 V/V Settling Time, 0.2% tSETTLE — 250 — ns G = +1 V/V, VOUT = 100 mVp-p Slew Rate SR — 7.0 — V/µs Total Harmonic Distortion Plus Noise f = 1 kHz, G = +1 V/V THD+N — 0.00053 — % VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK), VDD = 5.0V, BW = 22 kHz f = 1 kHz, G = +1 V/V, RL = 600Ω THD+N — 0.00064 — % VOUT = 0.25V to 3.25V (1.75V ± 1.50VPK), VDD = 5.0V, BW = 22 kHz f = 1 kHz, G = +1 V/V THD+N — 0.0014 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz f = 1 kHz, G = +10 V/V THD+N — 0.0009 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz f = 1 kHz, G = +100 V/V THD+N — 0.005 — % VOUT = 4VP-P, VDD = 5.0V, BW = 22 kHz Noise Input Noise Voltage Eni — 2.9 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —8.7 — nV/ √Hz f = 10 kHz Input Noise Current Density ini —3 — fA/ √Hz f = 1 kHz Electrical Specifications: Unless otherwise indicated, TA = +25°C, VDD = +2.5V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL =10kΩ to VDD/2 and CL = 60 pF. Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —0.2 VDD V CS Input Current, Low ICSL -1.0 0.01 — µA CS = VSS CS High Specifications CS Logic Threshold, High VIH 0.8 VDD —VDD V CS Input Current, High ICSH — 0.01 2.0 µA CS = VDD GND Current ISS -2 -0.05 — µA CS = VDD Amplifier Output Leakage IO(LEAK) —0.01— µA CS = VDD CS Dynamic Specifications CS Low to Amplifier Output Turn-on Time tON — 2 10 µs G = +1, VIN = VSS, CS = 0.2VDD to VOUT = 0.45VDD time CS High to Amplifier Output High-Z Time tOFF — 0.01 — µs G = +1, VIN = VSS, CS = 0.8VDD to VOUT = 0.05VDD time Hysteresis VHYST —0.6 — V VDD = 5.0V, Internal Switch |
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