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MCP1702-1502E/MB 数据表(PDF) 19 Page - Microchip Technology |
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MCP1702-1502E/MB 数据表(HTML) 19 Page - Microchip Technology |
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19 / 32 page ![]() © 2009 Microchip Technology Inc. DS22008D-page 19 MCP1702 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 Typical Application The MCP1702 is most commonly used as a voltage regulator. It’s low quiescent current and low dropout voltage makes it ideal for many battery-powered applications. FIGURE 6-1: Typical Application Circuit. 6.1.1 APPLICATION INPUT CONDITIONS 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1702 is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (2.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: The maximum continuous operating junction temperature specified for the MCP1702 is +125°C. To estimate the internal junction temperature of the MCP1702, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R θ JA). The thermal resistance from junction to ambient for the SOT-23A pin package is estimated at 336°C/W. EQUATION 6-2: The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: EQUATION 6-4: EQUATION 6-5: Package Type = SOT-23A Input Voltage Range = 2.8V to 3.2V VIN maximum = 3.2V VOUT typical = 1.8V IOUT = 150 mA maximum MCP1702 GND VOUT VIN CIN 1µF Ceramic COUT 1µF Ceramic VOUT VIN (2.8V to 3.2V) 1.8V IOUT 150 mA P LDO V IN MAX ) () V OUT MIN () – () I OUT MAX ) () × = Where: PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage T JMAX () P TOTAL R θ JA × T AMAX + = Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation R θ JA Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature P DMAX () T JMAX () T AMAX () – () R θ JA --------------------------------------------------- = Where: PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TA(MAX) Maximum ambient temperature R θ JA = Thermal resistance from junction to ambient T JRISE () P DMAX () R θ JA × = Where: TJ(RISE) = Rise in device junction temperature over the ambient temperature PTOTAL = Maximum device power dissipation R θ JA Thermal resistance from junction to ambient T J T JRISE () T A + = Where: TJ = Junction Temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA Ambient temperature |
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