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MCP1702-1502E/MB 数据表(PDF) 19 Page - Microchip Technology

部件名 MCP1702-1502E/MB
功能描述  250 mA Low Quiescent Current LDO Regulator
PDF  32 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP1702-1502E/MB 数据表(HTML) 19 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS22008D-page 19
MCP1702
6.0
APPLICATION CIRCUITS AND
ISSUES
6.1
Typical Application
The MCP1702 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage makes it ideal for many battery-powered
applications.
FIGURE 6-1:
Typical Application Circuit.
6.1.1
APPLICATION INPUT CONDITIONS
6.2
Power Calculations
6.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1702 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
(2.0 µA x VIN). The following equation can be used to
calculate the internal power dissipation of the LDO.
EQUATION 6-1:
The
maximum
continuous
operating
junction
temperature specified for the MCP1702 is +125°C. To
estimate the internal junction temperature of the
MCP1702, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (R
θ
JA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.
EQUATION 6-2:
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION 6-3:
EQUATION 6-4:
EQUATION 6-5:
Package Type = SOT-23A
Input Voltage Range = 2.8V to 3.2V
VIN maximum = 3.2V
VOUT typical = 1.8V
IOUT = 150 mA maximum
MCP1702
GND
VOUT
VIN
CIN
1µF Ceramic
COUT
1µF Ceramic
VOUT
VIN
(2.8V to 3.2V)
1.8V
IOUT
150 mA
P
LDO
V
IN MAX
)
()
V
OUT MIN
()
() I
OUT MAX
)
()
×
=
Where:
PLDO = LDO Pass device internal
power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
T
JMAX
()
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
Where:
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
R
θ
JA
Thermal resistance from
junction to ambient
TAMAX = Maximum ambient temperature
P
DMAX
()
T
JMAX
()
T
AMAX
()
()
R
θ
JA
---------------------------------------------------
=
Where:
PD(MAX) = Maximum device power
dissipation
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX)
Maximum ambient temperature
R
θ
JA
=
Thermal resistance from
junction to ambient
T
JRISE
()
P
DMAX
()
R
θ
JA
×
=
Where:
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
PTOTAL = Maximum device power
dissipation
R
θ
JA
Thermal resistance from
junction to ambient
T
J
T
JRISE
()
T
A
+
=
Where:
TJ = Junction Temperature
TJ(RISE) = Rise in device junction
temperature over the ambient
temperature
TA
Ambient temperature



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