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MCP4142T-103E/MS 数据表(PDF) 51 Page - Microchip Technology |
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MCP4142T-103E/MS 数据表(HTML) 51 Page - Microchip Technology |
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51 / 88 page ![]() © 2008 Microchip Technology Inc. DS22059B-page 51 MCP414X/416X/424X/426X 7.6 Read Data Normal and High Voltage The Read command is a 16-bit command. The Read Command can be issued to both the Volatile and Non-Volatile memory locations. The format of the command is shown in Figure 7-4. The first 6-bits of the Read command determine the address and the command. The 7th clock will output the CMDERR bit on the SDO pin. The remaining 9-clocks the device will transmit the 9 data bits (D8:D0) of the specified address (AD3:AD0). Figure 7-4 shows the SDI and SDO information for a Read command. During a write cycle (Write or High Voltage Write to a Non-Volatile memory location) the Read command can only read the Volatile memory locations. By reading the Status Register (04h), the Host Controller can determine when the write cycle has completed (via the state of the EEWA bit). 7.6.1 SINGLE READ The read operation requires that the CS pin be in the active state (VILor VIHH). Typically, the CS pin will be in the inactive state (VIH) and is driven to the active state (VILor VIHH). The 16-bit Read Command (Command Byte and Data Byte) is then clocked in on the SCK and SDI pins. The SDO pin starts driving data on the 7th bit (CMDERR bit) and the addressed data comes out on the 8th through 16th clocks. Figure 6-3 through Figure 6-6 show possible waveforms for a single read. Figure 6-5 and Figure 6-6 show the single read waveforms when the SDI and SDO signals are multiplexed on the same pin. For additional information on the multiplexing of these signals, refer to Section 6.1.3 “SDI/SDO” . FIGURE 7-4: Read Command - SDI and SDO States. A D 3 A D 2 A D 1 A D 0 1 1 XXXXXXXXXX 1111111 D 8 D 7 D 6 D 5 D 4 D 3 D 2 D 1 D 0 Valid Address/Command combination 1111110000000000 Attempted Non-Volatile Memory Read during Non-Volatile Memory Write Cycle COMMAND BYTE DATA BYTE SDI SDO READ DATA |
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