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DA1634.001

28 November, 2008

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Conditions

Min

Max

Unit

Supply Voltage

-0.3

6.0

V

Storage Temperature

-55

+125

Input Voltage

-0.3

VDD+0.3

V

Latch-up Current Limit

For all pins (see note 1)

-100

100

mA

Stresses beyond those listed may cause permanent damage to the device. The device may not operate under these conditions, but it will

not be destroyed.

This is a CMOS device and therefore it should be handled carefully to avoid any damage by static voltages (ESD).

Note 1.

In latch-up testing the supply voltages are connected normally to the tested device. Then pulsed test current is fed to each input

separately and device current consumption is observed. If the device current consumption increases suddenly due to test current pulses

and the abnormally high current consumption continues after test current pulses are cut off then the device has gone to latch up. Current

pulse is turned on for 10 ms and off for 20 ms. Testing is done up to ± 300 mA.

ELECTRICAL CHARACTERISTICS

(Operating Conditions: VDD = 2.0V, Temperature = 25°C unless otherwise mentioned)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Supply Voltage

VDD

1.0

2.0

3.1

V

Operating

Temperature

-20

+25

+60

ºC

Standby Current

XPD = “0”

0.5

µA

Quiescent Current

XPD = “1”, OUTPUTS OFF (INx=”0”)

XPD = “1”, 1 OUTPUT ON

XPD = “1”, 2 OUTPUTS ON

XPD = “1”, 3 OUTPUTS ON

XPD = “1”, 4 OUTPUTS ON

140

270

390

500

0.5

300

500

700

900

µA

Current driver

XPD = “1”

VDD = 0.95V, OUT1-4 = 0.075V

VDD = 1.15V, OUT1-4 = 0.025V

VDD = 1.15V, OUT1-4 = 0.075V

VDD = 1.25V, OUT1-4 = 0.175V

VDD = 1.70V, OUT1-4 = 0.625V

1.4

1

1.4

1.4

1.4

2.1

1.8

2.1

2.1

2.1

4.5

4.0

3.45

3

3

mA

Leakage current of

an output

VDD = 1.70 V, VOUT1-4 = VDD

VIN1-4 = GND

100

nA

Input high voltage

0.8*VDD

VDD

V

Input low voltage

GND

0.2*VDD

V

Start up time

VDD = 1.15 V

15

50

µs