www.clare.com

DS-CPC5602-R05

1

CPC5602

N Channel Depletion Mode FET

RoHS

2002/95/EC

Pb

www.clare.com

Part Number

Description

CPC5602C

N-Channel Depletion Mode FET, SOT-223

Package (80/tube)

CPC5602CTR

N-Channel Depletion Mode FET, SOT-223

Package Tape and Reel (1000/reel)

Applications

Features

Description

Ordering Information

Package Pinout

Data Access Arrangement (DAA)

The CPC5602 is an “N” channel depletion mode Field

Effect Transistor (FET) that utilizes Clare’s proprietary

third generation vertical DMOS process. The third

generation process realizes world class, high voltage

MOSFET performance in an economical silicon gate

process. The vertical DMOS process yields a highly

reliable device, particularly in difficult application

environments such as telecommunications.

One of the primary applications for the CPC5602 is

as a linear regulator/hook switch for the LITELINK

family of Data Access Arrangements (DAA) Devices

CPC5610A, CPC5611A, CPC5620A, CPC5621A,

and CPC5622A.

The CPC5602 has a typical on-resistance of 8

Ω, a

drain-to-source voltage of 350V, and is available in

an SOT-223 package. As with all MOS devices, the

FET structure prevents thermal runaway and thermal-

induced secondary breakdown.

Pin Number

Name

1GATE

2

DRAIN

3

SOURCE

4

DRAIN

Parameter

Rating

Units

Drain-to-Source Voltage (V

350

V

Max On-Resistance (R

Ω

Max Power

2.5

W

D

G

D

S

4

1

23