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EM68932DVKB 数据表(PDF) 1 Page - Etron Technology, Inc.

部件名 EM68932DVKB
功能描述  4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
PDF  40 Pages
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制造商  ETRON [Etron Technology, Inc.]
网页  http://www.etron.com
标志 ETRON - Etron Technology, Inc.

EM68932DVKB 数据表(HTML) 1 Page - Etron Technology, Inc.

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EtronTech
EM68932DVKB
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
Etron Confidential
Advanced (Rev. 1.0 Aug. /2009)
Features
• Fast clock rate: 166/133 MHz
• Differential Clock CK & CK
• Bi-directional DQS
• Four internal banks, 1M x 32-bit for each bank
• Edge-aligned with read data, centered in write data
• Programmable Mode and Extended Mode Registers
- CAS Latency: 2, or 3
- Burst length: 2, 4, or 8
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
• Individual byte writes mask control
• DM Write Latency = 0
• Precharge Standby Current = 100 µA
• Self Refresh Current = 200 µA
• Deep power-down Current = 10 µA max. at 85℃
• Auto Refresh and Self Refresh
• 4096 refresh cycles / 64ms
• No DLL (Delay Lock Loop), to reduce power; CK to
DQS is not synchronized.
• Power supplies: VDD & VDDQ = +1.8V+0.15V/-0.1V
• Interface: LVCMOS
• Ambient Temperature TA = -25 ~ 85℃,
• 90-ball 8mm x 13mm VFBGA package
- Pb and Halogen Free
Overview
The EM68932D is 134,217,728 bits of double data
rate synchronous DRAM organized as 4 banks of
1,048,576 words by 32 bits. The synchronous
operation with Data Strobe allows extremely high
performance.
EM68932D
is
applied
to
reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies,
programmable
burst
length
and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Table 1. Ordering Information
Part Number
Clock Frequency IDD6 Package
EM68932DVKB-6H
166MHz
200
µA VFBGA
EM68932DVKB-75H
133MHz
200
µA VFBGA
VK: indicates VFBGA package
B: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
A
B
C
D
E
1
2
3
789
.
VSS
DQ31
VDDQ
DQ29
VSSQ
DQ27
VDDQ
DQ25
VSSQ
DQS3
VSSQ
DQ30
DQ28
DQ26
DQ24
.
VDDQ
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQS2
VDD
VSSQ
VDDQ
VSSQ
VDDQ
F
VDD
DM3
NC
NC
DM2
VSS
G
CKE
CK
CK
WE
CAS
RAS
H
A9
A11
NC
CS
BA0
BA1
J
A6
A7
A8
A0
A1
K
A4
DM1
A5
A2
DM0
A3
L
VSSQ
DQS1
DQ8
DQ7
DQS0
VDDQ
M
VDDQ
DQ9
DQ10
DQ5
DQ6
VSSQ
N
VSSQ
DQ11
DQ12
DQ3
DQ4
VDDQ
P
VDDQ
DQ13
DQ14
DQ1
DQ2
VSSQ
R
VSS
DQ15
VSSQ
VDDQ
DQ0
VDD
A10/AP


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