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AT25DF321 数据表(PDF) 30 Page - ATMEL Corporation |
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AT25DF321 数据表(HTML) 30 Page - ATMEL Corporation |
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30 / 37 page ![]() 30 3669B–DFLASH–6/09 AT25DF321 Notes: 1. Not 100% tested (value guaranteed by design and characterization). 12.7 Input Test Waveforms and Measurement Levels 12.8 Output Test Load 12.5 Program and Erase Characteristics Symbol Parameter Min Typ Max Units tPP Page Program Time (256 Bytes) 1.5 5.0 ms tBP Byte Program Time 6 µs tBLKE Block Erase Time 4-Kbyte 50 200 ms 32-Kbyte 350 600 64-Kbyte 600 950 tCHPE(1) Chip Erase Time 36 56 sec tWRSR(1) Write Status Register Time 200 ns 12.6 Power-Up Conditions Symbol Parameter Min Max Units tVCSL Minimum VCC to Chip Select Low Time 50 µs tPUW Power-up Device Delay Before Program or Erase Allowed 10 ms VPOR Power-On Reset Voltage 1.5 2.5 V AC DRIVING LEVELS AC MEASUREMENT LEVEL 0.45V 1.5V 2.4V tR, tF < 2 ns (10% to 90%) DEVICE UNDER TEST 30 pF |
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