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HAT2202C 数据表(PDF) 4 Page - Renesas Technology Corp |
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HAT2202C 数据表(HTML) 4 Page - Renesas Technology Corp |
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4 / 7 page ![]() HAT2202C REJ03G1236-0600 Rev.6.00 Oct 01, 2009 Page 4 of 6 Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage 75 60 45 30 15 –25 0 25 50 75 100 125 150 0 0.3 0.1 1 10 100 30 10 3 1 0.3 0.1 3 25 °C 75 °C VGS = 2.5 V 1, 1.5 ,3 A 0 10 20 1000 100 300 40 0 8 30 6 20 4 10 2 24 6 8 10 0 100 1 10 0.1 0.3 1 3 10 30 100 30 10 Ciss Coss ID = 3 A VDD VGS 515 25 0 0.4 0.8 1.2 1.6 2.0 20 8 VGS = 0 V 4 12 16 3 A ID = 1, 1.5 A 4.5 V 5 V Crss VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = –25 °C Pulse Test VDS = 10 V Pulse Test VGS = 0 f = 1 MHz VDD = 5 V 10 V 20 V VDD = 20 V 10 V 5 V tr tf td(off) td(on) Pulse Test |
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