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HAT2202C 数据表(PDF) 1 Page - Renesas Technology Corp |
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HAT2202C 数据表(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  REJ03G1236-0600 Rev.6.00 Oct 01, 2009 Page 1 of 6 HAT2202C Silicon N Channel MOS FET Power Switching REJ03G1236-0600 Rev.6.00 Oct 01, 2009 Features • Low on-resistance RDS(on) = 31 mΩ typ. (at VGS = 4.5 V) • Low drive current. • High density mounting • 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 1 2 3 6 5 4 Indexband G D S 6 1 5 D 2 D 3 D 4 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS ±12 V Drain current ID 3 A Drain peak current ID (pulse) Note1 12 A Body - Drain diode reverse drain current IDR 3 A Channel dissipation Pch Note 2 900 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm) |
类似零件编号 - HAT2202C |
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类似说明 - HAT2202C |
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