REJ03G1831-0200 Rev.2.00 Sep 29, 2009

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Preliminary

RJK03C2DPB

Silicon N Channel Power MOS FET with Schottky Barrier Diode

Power Switching

REJ03G1831-0200

Rev.2.00

Sep 29, 2009

Features

• High speed switching

• Capable of 4.5 V gate drive

• Low drive current

• High density mounting

• Low on-resistance

• Pb-free

• Halogen-free

Outline

RENESAS Package code: PTZZ0005DA-A

(Package name: LFPAK)

1, 2, 3

Source

4

Gate

5

Drain

1 2

3 4

5

G

D

SS S

DD D

4

12 3

56 7 8

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

30

V

Gate to source voltage

±20

V

Drain current

55

A

Drain peak current

Note1

220

A

Body-drain diode reverse drain current

55

A

Avalanche current

Note 2

25

A

Avalanche energy

Note 2

62.5

mJ

Channel dissipation

Pch

Note3

60

W

Channel to Case Thermal Resistance

θch-C

2.09

°C/W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 μs, duty cycle ≤ 1%

2. Value at Tch = 25

°C, Rg ≥ 50 Ω

3. Tc = 25

°C