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RJK03C2DPB 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 RJK03C2DPB
功能描述  Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
PDF  7 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RJK03C2DPB 数据表(HTML) 3 Page - Renesas Technology Corp

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RJK03C2DPB
Preliminary
REJ03G1831-0200 Rev.2.00 Sep 29, 2009
Page 3 of 6
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain Current
ID
(A)
Static Drain to Source on State Resistance
vs. Drain Current
100
80
60
40
20
0
2
468
10
100
80
60
40
20
0
12
3
4
5
Tc = 75
°C
25
°C
–25
°C
VDS = 10 V
Pulse Test
VGS = 2.4 V
Pulse Test
1
0.3
0.1
30
300
1
10
100
1000
3
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 20 A
10 A
10
3
VGS = 4.5 V
10 V
2.6 V
2.8 V
10 V
3.0 V
4.5 V
Pulse Test
5 A
Case Temperature
Tc (°C)
Power vs. Temperature Derating
80
60
40
20
0
50
100
150
200
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
0.1
1
10
100
10
100
1000
1
0.1
PW = 10 ms
1 ms
Operation in
this area is
limited by RDS(on)
Tc = 25
°C
1 shot Pulse



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