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BQ20Z45DBTR-R1 数据表(PDF) 3 Page - Texas Instruments |
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BQ20Z45DBTR-R1 数据表(HTML) 3 Page - Texas Instruments |
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3 / 18 page ![]() bq20z45-R1 www.ti.com SLUS992 – DECEMBER 2009 PIN FUNCTIONS PIN I/O(1) DESCRIPTION NO. NAME 1 DSG O High side N-chan discharge FET gate drive Battery pack input voltage sense input. It also serves as device wake up when device is in shutdown 2 PACK IA, P mode. Positive device supply input. Connect to the center connection of the CHG FET and DSG FET to 3 VCC P ensure device supply either from battery stack or battery pack input 4 ZVCHG O P-chan pre-charge FET gate drive High voltage general purpose open drain output. Can be configured to be used in pre-charge 5 GPOD OD condition Pre-charge mode setting input. Connect to PACK to enable 0v pre-charge using charge FET 6 PMS I connected at CHG pin. Connect to VSS to disable 0V pre-charge using charge FET connected at CHG pin. 7 VSS P Negative device power supply input. Connect all VSS pins together for operation of device 8 REG33 P 3.3V regulator output. Connect at least a 2.2 μF capacitor to REG33 and VSS 9 TOUT P Thermistor bias supply output 10 VCELL+ - Internal cell voltage multiplexer and amplifier output. Connect a 0.1 μF capacitor to VCELL+ and VSS Alert output. In case of short circuit condition, overload condition and watchdog time out this pin will 11 ALERT OD be triggered. 12 PRES I System / Host present input. 13 TS1 IA Temperature sensor 1 input 14 TS2 IA Temperature sensor 2 input 15 PFIN I Fuse blow detection input 16 SAFE OD Blow fuse signal output 17 SMBD I/OD SMBus data line 18 SMBC I/OD SMBus clock line 19 NC - Not connected 20, 21, 25, VSS P Negative device power supply input. Connect all VSS pins together for operation of device 28 22 GSRP IA Coulomb counter differential input. Connect to one side of the sense resistor 23 GSRN IA Coulomb counter differential input. Connect to one side of the sense resistor 24 MRST I Reset input for internal CPU core. connect to RESET for correct operation of device 26 REG25 P 2.5V regulator output. Connect at least a 1 μF capacitor to REG25 and VSS RAM backup input. Connect a capacitor to this pin and VSS to protect loss of RAM data in case of 27 RBI P short circuit condition 29 RESET O Reset output. Connect to MSRT. 30 ASRN IA Short circuit and overload detection differential input. Connect to sense resistor 31 ASRP IA Short circuit and overload detection differential input. Connect to sense resistor Cell voltage sense input and cell balancing input for the negative voltage of the bottom cell in cell 32 VC5 IA, P stack. Cell voltage sense input and cell balancing input for the positive voltage of the bottom cell and the 33 VC4 IA, P negative voltage of the second lowest cell in cell stack. Cell voltage sense input and cell balancing input for the positive voltage of the second lowest cell in 34 VC3 IA, P cell stack and the negative voltage of the second highest cell in 4 cell applications. Cell voltage sense input and cell balancing input for the positive voltage of the second highest cell 35 VC2 IA, P and the negative voltage of the highest cell in 4 cell applications. Connect to VC3 in 2 cell stack applications Cell voltage sense input and cell balancing input for the positive voltage of the highest cell in cell 36 VC1 IA, P stack in 4 cell applications. Connect to VC2 in 3 or 2 cell stack applications 37 BAT I, P Battery stack voltage sense input 38 CHG O High side N-chan charge FET gate drive (1) I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): bq20z45-R1 |
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