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CHA2069 数据表(PDF) 7 Page - United Monolithic Semiconductors |
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CHA2069 数据表(HTML) 7 Page - United Monolithic Semiconductors |
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7 / 8 page ![]() 18-31GHz Low Noise Amplifier CHA2069 Ref. :DSCHA20699273 - 8-Sep-99 7 /8 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Typical Chip Assembly Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. The two requirements are : N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes positive. ( internal Gate to Source voltage ) We propose two standard biasing : Low Noise and low consumption : Vd = 4.5V and B, D, E grounded. All the other pads non connected ( NC ). Idd = 55mA & Pout-1dB = 10dBm Typical. ( Equivalent to A,B,C,D,E F: non connected and Vd=4.5V ; G1=G2=G3=+1.V ). Low Noise and higher output power Vd = 4.5V and B, C, F grounded. All the other pads non connected ( NC ). Idd = 75mA & Pout-1dB = 12dBm Typical.. |
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