CHA2069

18-31GHz Low Noise Amplifier

Ref. :DSCHA20699273 - 8-Sep-99

2

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd = +4,5V Pads:B=D=E=Gnd

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

18

31

Ghz

G

Gain (1)

18

22

dB

∆G

Gain flatness (1)

± 1

± 1.5

dB

NF

Noise figure (1)

2.5

3.5

dB

VSWRin

Input VSWR (1)

2.0:1

2.5:1

VSWRout

Ouput VSWR (1)

2:0:1

2.5:1

IP3

3rd order intercept point

20

dBm

P1dB

Output power at 1dB gain compression

10

dBm

Id

Drain bias current (2)

55

75

mA

(1) These values are representative on-wafer measurements that are made without bonding wires

at the RF ports.

(2) This current is the typical value from the low noise low consumption

biasing ( B & D & E

grounded ).

Tamb = +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage (5)

5.0

V

Pin

Maximum peak input power overdrive (4)

+15

dBm

Top

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +125

°C

(3) Operation of this device above anyone of these paramaters may cause permanent damage.

(4) Duration < 1s.

(5) See chip biasing options pp7