CHA2092b

18-32GHz Low Noise Amplifier

Ref. : DSCHA20921233 21-August-01

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vds = 3.5V; Ids=60mA

Symbol

Parameter

Min

Typ

Max

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

20

28

18

32

GHz

G

Small signal gain (1)

18

22

17

22

dB

∆G

Small signal gain flatness (1)

±1.5

±2.5

dB

∆Gsb

Gain flatness over 40MHz

0.5

0.5

dBpp

Is

Reverse isolation (1)

25

30

25

30

dB

P1dB

Output power at 1dB gain compression (3)

8

10

8

10

dBm

VSWRin

Input VSWR (1)

2.5:1

3.0:1

2.5:1

3.5:1

VSWRout

Output VSWR (1)

2.5:1

3.0:1

2.5:1

3.5:1

NF

18-20GHz

Noise figure (2)

20-28GHz

28-32GHz

2.5

3.5

2.5

2.5

2.5

4

3.5

3.5

dB

Vd

DC Voltage

Vd

Vgs1,Vgs2&3

3.5

-0.5

4.5

3.5

-0.5

4.5

V

V

Id

Bias current (2)

60

100

60

100

mA

(1)These values are representative of on-wafer measurements that are made without bonding

wires at the RF ports.

(2) 60 mA is the typical bias current used for on wafer measurements, with Vgs1 and Vgs2&3

connected together. For optimum noise figure, the bias current could be reduced down to

50 mA, adjusting the Vgs1 voltage.

(3) Ids=90mA

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

5.0

V

Id

Drain bias current

120

mA

Vg

Gate bias voltage

-2.0 to +0.4

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.