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CHA2098RBF 数据表(PDF) 2 Page - United Monolithic Semiconductors |
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CHA2098RBF 数据表(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 6 page ![]() CHA2098RBF 20-33GHz High Gain Buffer Amplifier Ref. : DSCHA2098RBF2057 -26-Feb.-02 2/6 Specifications subject to change without notice " Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Schematic Typical Bias Conditions for an ambient Temperature of +25°C Symbol Pin No. Parameter Values Unit Vd 6 Drain bias voltage 3.5 V Vg1 1 Gate bias voltage (1st stage) -0.1 V Vg2, Vg3 2 Gate bias voltage (2nd and 3rd stage) -0.1 V Id 6 Drain current 150 mA All other pins are not used for this device. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 200 mA Vg Gate bias voltage -2.0 to +0.4 V Ta Operating temperature range (2) -40 to +85 °C Tstg Storage temperature range -55 to +155 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Upper temperature limit strongly dependent on motherboard design; ratings given for ideal thermal coupling |
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