CHA2098RBF

Ref. : DSCHA2098RBF2057 -26-Feb.-02

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Specifications subject to change without notice

1."

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

20-33GHz High Gain Buffer Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The monolithic microwave IC (MMIC) in the

package is a high gain broadband three-

stage

monolithic

buffer

amplifier.

It

is

designed for a wide range of applications,

from military to commercial communication

systems. The circuit is manufactured with a

PM-HEMT process, 0.25µm gate length, via

holes through the substrate, air bridges and

electron beam gate lithography.

It is supplied in a new SMD leadless chip

carrier.

Main Features

■ Broadband performance: 20-40GHz

■ Small signal gain 18dB (typical)

■ SMD leadless package

■ Pout-1dB : +15dBm (typical).

■ Dimensions: 5.08 x 5.08 x 0.97 mm

3

SMD Package Dimensions

"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated

by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the

package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN