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MCP6281-E/MS 数据表(PDF) 4 Page - Microchip Technology

部件名 MCP6281-E/MS
功能描述  450 關A, 5 MHz Rail-to-Rail Op Amp
PDF  36 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP6281-E/MS 数据表(HTML) 4 Page - Microchip Technology

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MCP6281/1R/2/3/4/5
DS21811E-page 4
© 2008 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-2. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Temperature Range
TA
-40
+125
°C
Note
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θ
JA
256
°C/W
Thermal Resistance, 6L-SOT-23
θ
JA
230
°C/W
Thermal Resistance, 8L-PDIP
θ
JA
—85
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
163
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
206
°C/W
Thermal Resistance, 14L-PDIP
θ
JA
70
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
120
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
100
°C/W
Note:
The Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.
VDD
MCP628X
RG
RF
RN
VOUT
VIN
VDD/2
1µF
CL
RL
VL
0.1 µF
VDD
MCP628X
RG
RF
RN
VOUT
VDD/2
VIN
1µF
CL
RL
VL
0.1 µF



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