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MCP6281-E/MS 数据表(PDF) 4 Page - Microchip Technology |
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MCP6281-E/MS 数据表(HTML) 4 Page - Microchip Technology |
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4 / 36 page ![]() MCP6281/1R/2/3/4/5 DS21811E-page 4 © 2008 Microchip Technology Inc. TEMPERATURE SPECIFICATIONS 1.1 Test Circuits The test circuits used for the DC and AC tests are shown in Figure 1-2 and Figure 1-2. The bypass capacitors are laid out according to the rules discussed in Section 4.6 “Supply Bypass”. FIGURE 1-2: AC and DC Test Circuit for Most Non-Inverting Gain Conditions. FIGURE 1-3: AC and DC Test Circuit for Most Inverting Gain Conditions. Electrical Characteristics: Unless otherwise indicated, VDD = +2.2V to +5.5V and VSS = GND. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Temperature Range TA -40 — +125 °C Note Storage Temperature Range TA -65 — +150 °C Thermal Package Resistances Thermal Resistance, 5L-SOT-23 θ JA — 256 — °C/W Thermal Resistance, 6L-SOT-23 θ JA — 230 — °C/W Thermal Resistance, 8L-PDIP θ JA —85 — °C/W Thermal Resistance, 8L-SOIC θ JA — 163 — °C/W Thermal Resistance, 8L-MSOP θ JA — 206 — °C/W Thermal Resistance, 14L-PDIP θ JA — 70 — °C/W Thermal Resistance, 14L-SOIC θ JA — 120 — °C/W Thermal Resistance, 14L-TSSOP θ JA — 100 — °C/W Note: The Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C. VDD MCP628X RG RF RN VOUT VIN VDD/2 1µF CL RL VL 0.1 µF VDD MCP628X RG RF RN VOUT VDD/2 VIN 1µF CL RL VL 0.1 µF |
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