STM32F100C4 datasheet(35/84 Pages) STMICROELECTRONICS

35 / 84 page

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB

Electrical characteristics

Doc ID 16455 Rev 2

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5.3.2

Operating conditions at power-up / power-down

Subject to general operating conditions for TA.

Table 9.

Operating conditions at power-up / power-down

5.3.3

Embedded reset and power control block characteristics

The parameters given in Table 10 are derived from tests performed under the ambient

temperature and VDD supply voltage conditions summarized in Table 8.

VBAT

Backup operating voltage

1.8

3.6

Power dissipation at TA =

85 °C for suffix 6 or TA =

105 °C for suffix 7(2)

LQFP100

434

LQFP64

444

TFBGA64

308

LQFP48

363

Ambient temperature for 6

suffix version

Maximum power dissipation

–40

°C

Low power dissipation(3)

–40

105

Ambient temperature for 7

suffix version

Maximum power dissipation

–40

105

°C

Low power dissipation(3)

–40

125

Junction temperature range

6 suffix version

–40

105

°C

7 suffix version

–40

125

When the ADC is used, refer to Table 41: ADC characteristics.

If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal

characteristics on page 79).

In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see

Table 6.2: Thermal characteristics on page 79).

Table 8.

General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Symbol

Parameter

Min

Max

Unit

tVDD

VDD rise time rate



µs/V

VDD fall time rate



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