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STM32F100C4 数据表(PDF) 49 Page - STMicroelectronics |
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STM32F100C4 数据表(HTML) 49 Page - STMicroelectronics |
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49 / 84 page  STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB Electrical characteristics Doc ID 16455 Rev 2 49/84 5.3.7 Internal clock source characteristics The parameters given in Table 23 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 8. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator Wakeup time from low-power mode The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode: ● Stop or Standby mode: the clock source is the RC oscillator ● Sleep mode: the clock source is the clock that was set before entering Sleep mode. All timings are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 8. Table 23. HSI oscillator characteristics(1)(2) 1. Guaranteed by design, not tested in production. 2. VDD = 3.3 V, TA = –40 to 105 °C °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz ACCHSI Accuracy of HSI oscillator TA = –40 to 105 °C –2.7 3 % TA = –10 to 85 °C –2 2.5 % TA = 0 to 70 °C –2 2.5 % TA = 25 °C –0.7 1 % tsu(HSI) HSI oscillator startup time 1 2 µs IDD(HSI) HSI oscillator power consumption 80 100 µA Table 24. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = –40 to 105 °C °C unless otherwise specified. Symbol Parameter Min Typ Max Unit fLSI Frequency 30 40 60 kHz tsu(LSI) (2) 2. Guaranteed by design, not tested in production. LSI oscillator startup time 85 µs IDD(LSI) (2) LSI oscillator power consumption 0.65 1.2 µA Table 25. Low-power mode wakeup timings Symbol Parameter Typ Unit tWUSLEEP (1) Wakeup from Sleep mode 1.8 µs |
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