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UTC2SC1815 数据表(PDF) 2 Page - Unisonic Technologies |
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UTC2SC1815 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 2 page ![]() UTC2SC1815 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R201-006,A CLASSIFICATION OF hFE1 RANK Y G L RANGE 120-240 200-400 350-700 TYPICAL CHARACTERISTIC CURVES Fig.1 Static characteristics Collector-Emitter voltage ( V) 04 8 12 16 20 0 20 40 60 80 100 Fig.2 DC current Gain Ic,Collector current (mA) 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 VCE=6V Fig.3 Base-Emitter on Voltage 10 -1 10 0 10 1 10 2 Base-Emitter voltage (V) 0 0.2 0.4 0.6 0.8 1.0 VCE=6V Ic,Collector current (mA) 10 3 10 2 10 1 10 0 10 -1 10 1 10 2 10 3 10 4 Fig.4 Saturation voltage Fig.5 Current gain-bandwidth product Fig.6 Collector output Capacitance VCE(sat) VBE(sat) Ic=10*IB Ic,Collector current (mA) 10 0 10 1 10 2 10 3 10 0 10 1 10 2 VCE=6V Collector-Base voltage (V) 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1MHz IE=0 IB=50 µA IB=100 µA IB=150 µA IB=200 µA IB=250 µA IB=300 µA 10 -1 10 -1 |
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