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UTC2SC1815 数据表(PDF) 1 Page - Unisonic Technologies |
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UTC2SC1815 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 2 page ![]() UTC2SC1815 NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-006,A AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015 TO-92 1 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector dissipation(Ta=25 °C) Pc 400 mW Collector current Ic 150 mA Base current IB 50 mA Junction Temperature Tj 125 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector cut-off current ICBO VCB=60V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,Ic=0 100 nA DC current gain(note) hFE1 hFE2 VCE=6V,Ic=2mA VCE=6V,Ic=150mA 70 25 700 Collector-emitter saturation voltage VCE(sat) Ic=100mA,IB=10mA 0.1 0.25 V Base-emitter saturation voltage VBE(sat) Ic=100mA,IB=10mA 1.0 V Current gain bandwidth product fT VCE=10V,Ic=50mA 80 MHz Output capacitance Cob VCB=10V,IE=0,f=1MHz 2.0 3.0 pF Noise Figure NF Ic=-0.1mA,VCE=6V RG=10k Ω,f=100Hz 1.0 1.0 dB |
类似零件编号 - UTC2SC1815 |
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类似说明 - UTC2SC1815 |
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