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APTGF200SK120D3G 数据表(PDF) 4 Page - Microsemi Corporation |
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APTGF200SK120D3G 数据表(HTML) 4 Page - Microsemi Corporation |
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4 / 5 page ![]() APTGF200SK120D3G www.microsemi.com 4- 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 0 100 200 300 400 01 23 45 6 VCE (V) Output Characteristics VGE=15V VGE=12V VGE=20V VGE=9V 0 100 200 300 400 01 2 3 4 5 6 VCE (V) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 0 100 200 300 400 5 6789 10 11 12 VGE (V) Energy losses vs Collector Current Eon Eoff Err 0 10 20 30 40 50 60 0 100 200 300 400 IC (A) VCE = 600V VGE = 15V RG = 4.7 Ω TJ = 125°C Eon Eoff Err 0 20 40 60 80 100 0 5 10 15 20 25 30 35 Gate Resistance (ohms) VCE = 600V VGE =15V IC = 200A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 100 200 300 400 500 0 300 600 900 1200 1500 VCE (V) VGE=15V TJ=125°C RG=4.7 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.02 0.04 0.06 0.08 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) IGBT |
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