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APTGF200SK120D3G 数据表(PDF) 1 Page - Microsemi Corporation |
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APTGF200SK120D3G 数据表(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page  APTGF200SK120D3G www.microsemi.com 1- 5 Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V TC = 25°C 300 IC Continuous Collector Current TC = 80°C 200 ICM Pulsed Collector Current TC = 25°C 400 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 1400 W RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A@1150V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 2 1 5 Q1 3 4 VCES = 1200V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Buck Chopper NPT IGBT Power Module |
类似零件编号 - APTGF200SK120D3G |
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类似说明 - APTGF200SK120D3G |
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