APTM120A80FT1G datasheet(1/5 Pages) MICROSEMI

部件名	APTM120A80FT1G

功能描述	Phase leg MOSFET Power Module

PDF	5 Pages

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制造商	MICROSEMI [Microsemi Corporation]

网页	http://www.microsemi.com

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APTM120A80FT1G

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1

8

7

Q1

Q2

56

3

4

11

NTC

12

9

10

2

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol

Parameter

Max ratings

Unit

VDSS

Drain - Source Breakdown Voltage

1200

V

Tc = 25°C

14

ID

Continuous Drain Current

Tc = 80°C

10

IDM

Pulsed Drain current

90

A

VGS

Gate - Source Voltage

±30

V

RDSon

Drain - Source ON Resistance

960

m

Ω

PD

Maximum Power Dissipation

Tc = 25°C

357

W

IAR

Avalanche current (repetitive and non repetitive)

12

A

Application

•

Welding converters

•

Switched Mode Power Supplies

•

Uninterruptible Power Supplies

•

Motor control

Features

•

Power MOS 8™ Fast FREDFETs

-

Low RDSon

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Very low stray inductance

-

Symmetrical design

•

Internal thermistor for temperature monitoring

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

•

RoHS Compliant

Phase leg

MOSFET Power Module

VDSS = 1200V

RDSon = 800mΩ typ @ Tj = 25°C

ID = 14A @ Tc = 25°C

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APTM120A80FT1G 数据表(PDF) 1 Page - Microsemi Corporation

APTM120A80FT1G 数据表(HTML) 1 Page - Microsemi Corporation

类似零件编号 - APTM120A80FT1G

类似说明 - APTM120A80FT1G

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APTM120A80FT1G 数据表(PDF) 1 Page - Microsemi Corporation

APTM120A80FT1G 数据表(HTML) 1 Page - Microsemi Corporation

类似零件编号 - APTM120A80FT1G

类似说明 - APTM120A80FT1G

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