APTM120A80FT1G

www.microsemi.com

2 – 5

Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

250

Zero Gate Voltage Drain Current

1000

µA

Drain – Source on Resistance

800

960

m

Ω

Gate Threshold Voltage

3

4

5

V

Gate – Source Leakage Current

±100

nA

Dynamic Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Input Capacitance

6696

Output Capacitance

615

Reverse Transfer Capacitance

f = 1MHz

80

pF

Total gate Charge

260

Gate – Source Charge

42

Gate – Drain Charge

120

nC

Turn-on Delay Time

45

Rise Time

27

Turn-off Delay Time

145

Fall Time

Resistive switching @ 25°C

42

ns

Source - Drain diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Tc = 25°C

14

Continuous Source current

(Body diode)

Tc = 80°C

10

A

Diode Forward Voltage

1.1

V

dv/dt

Peak Diode Recovery

25

V/ns

270

Reverse Recovery Time

640

ns

1.3

Reverse Recovery Charge

3.5

µC

dv/dt numbers reflect the limitations of the circuit rather than the device itself.

di/dt

≤ 1000A/µs