APTM120H80FT3G

www.microsemi.com

5 – 5

0

10

20

30

40

50

0

0.2

0.4

0.6

0.8

1

1.2

Drain Current vs Source to Drain Voltage

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

and foreign patents. U.S and Foreign patents pending. All Rights Reserved.