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APTM120H80FT3G 数据表(PDF) 1 Page - Microsemi Corporation

部件名 APTM120H80FT3G
功能描述  Full bridge MOSFET Power Module
PDF  5 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTM120H80FT3G 数据表(HTML) 1 Page - Microsemi Corporation

  APTM120H80FT3G Datasheet HTML 1Page - Microsemi Corporation APTM120H80FT3G Datasheet HTML 2Page - Microsemi Corporation APTM120H80FT3G Datasheet HTML 3Page - Microsemi Corporation APTM120H80FT3G Datasheet HTML 4Page - Microsemi Corporation APTM120H80FT3G Datasheet HTML 5Page - Microsemi Corporation  
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APTM120H80FT3G
www.microsemi.com
1 – 5
16
15
18
20
23 22
13
11 12
14
8
7
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
1200
V
Tc = 25°C
14
ID
Continuous Drain Current
Tc = 80°C
10
IDM
Pulsed Drain current
90
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
960
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
12
A
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
Features
•
Power MOS 8™ Fast FREDFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
•
Very low stray inductance
-
Symmetrical design
•
Kelvin source for easy drive
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
•
RoHS Compliant
Full bridge
MOSFET Power Module
VDSS = 1200V
RDSon = 800mΩ typ @ Tj = 25°C
ID = 14A @ Tc = 25°C


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