GC4510 – GC4533

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 1

CONTROL DEVICES

High Voltage NIP Diodes

TM

®

Copyright

 2006

Rev.: 2009-01-19

RoHS Compliant

For the most current data, consult our website:

HU

www.MICROSEMI.com

U

Specifications are subject to change, consult factory for further information.

These devices are ESD sensitive and must be handled using ESD precautions.

D E SCRI PTI ON

The GC4500 series are high voltage, high power (anode base) NIP diodes.

These high resistivity silicon devices are passivated with silicon dioxide for

high stability and reliability and have been proven by thousands of device

hours in high reliability systems.

These devices can withstand storage temperatures from -65°C to +200°C

and will operate over the range from -55° to +150°C. All devices meet or

exceed military environmental specifications of MIL-PRF-19500.

The NIP diode is used when negative bias current is available for forward

conduction and will operate typically with -50 mA bias. Breakdown voltages

are available up to 500 volts. (Higher voltages available on request. Consult

factory for details.) These diodes have somewhat faster speeds as compared

with similar PIN diodes.

This series of diodes meets RoHS requirements per EU Directive

2002/95/EC. The standard terminal finish is gold unless otherwise specified.

Consult the factory if you have special requirements.

APPLICATIONS/BENEFITS



TR Switches



Antenna Selector Switches



Duplexers



Digital Phase Shifters

2B

APPLICATIONS

The GC4500 series can be used in RF circuits as an on/off element, as a

switch or as a current controlled resistor in attenuators extending over the

frequency range from UHF through Ku band.

Switch applications include medium high power switches (ECM systems), TR

or

lobing

switches,

channel

or

antenna

selection

switches

(telecommunications), duplexers (radar) and digital phase shifters (phase

arrays).

The GC4500 series are also used as active limiters for low to moderate RF

power levels. Attenuator type applications include amplitude modulators,

AGC attenuators, power levelers and level set attenuators.

ABSOLUTE MAXIMUM RATINGS AT 25º C

3B

(UNLESS OTHERWISE SPECIFIED)

Rating

Symbol

Value

Unit

Maximum Leakage Current

0.5

uA

Storage Temperature

-65 to +200

ºC

Operating Temperature

-55 to +150

ºC

KEY FEATURES



Available as packaged devices or

as chips for hybrid applications



High power handling



Suitable for applications to 18Ghz



Low Loss



Low Distortion



RoHS Compliant

1

1 Products are supplied with a Gold finish and are

suitable for RoHS complaint assembly. Consult factory

for details.