2PB709ART datasheet(4/10 Pages) NXP

4 / 10 page

2PB709ART_1

Product data sheet

Rev. 01 — 19 March 2007

4 of 10

NXP Semiconductors

2PB709ART

45 V, 100 mA PNP general-purpose transistor

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration for

SOT23 (TO-236AB); typical values

006aaa991

10−5

10−2

10−4

102

10−1

tp (s)

10−3

103

102

103

Zth(j-a)

(K/W)

0.75

0.50

0.33

0.20

0.01

0.10

0.05

0.02

δ = 1

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −45 V; IE =0A

−10

VCB = −45 V; IE =0A;

Tj = 150 °C

−5

µA

IEBO

emitter-base cut-off

current

VEB = −5 V; IC =0A

−10

hFE

DC current gain

VCE = −10 V;

IC = −2mA

210

340

VCEsat

collector-emitter

saturation voltage

IC = −100 mA;

IB = −10 mA

[1] --

−500

transition frequency

VCE = −10 V;

IC = −1 mA;

f = 100 MHz

MHz

collector capacitance VCB = −10 V;

IE =ie =0A;

f=1MHz

--5

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