2PB709ART datasheet(5/10 Pages) NXP

5 / 10 page

2PB709ART_1

Product data sheet

Rev. 01 — 19 March 2007

5 of 10

NXP Semiconductors

2PB709ART

45 V, 100 mA PNP general-purpose transistor

VCE = −10 V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 3.

DC current gain as a function of collector

current; typical values

Fig 4.

Collector current as a function of

collector-emitter voltage; typical values

IC/IB =10

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =10

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Fig 5.

Base-emitter saturation voltage as a function of

collector current; typical values

Fig 6.

Collector-emitter saturation voltage as a

function of collector current; typical values

IC (mA)

−10−1

−102

−10

−1

006aab028

200

300

100

400

500

hFE

(1)

(2)

(3)

VCE (V)

−10

−8

−4

−6

−2

006aab029

−0.04

−0.06

−0.02

−0.08

−0.1

(A)

IB (mA) = −0.75

−0.7

−0.6

−0.5

−0.4

−0.3

−0.2

−0.1

−0.65

−0.55

−0.45

−0.35

−0.25

−0.15

−0.05

006aab030

−0.5

−0.9

−1.3

VBEsat

(V)

−0.1

IC (mA)

−10−1

−102

−10

−1

(1)

(2)

(3)

006aab031

IC (mA)

−10−1

−102

−10

−1

−10−1

−1

VCEsat

(V)

−10−2

(1)

(2)

(3)

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