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HAL710SF-K 数据表(PDF) 6 Page - Micronas |
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HAL710SF-K 数据表(HTML) 6 Page - Micronas |
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6 / 19 page ![]() HAL 710, HAL 730 DATA SHEET 6 Oct. 13, 2009; DSH000031_002EN Micronas 2. Functional Description The HAL 710 and the HAL 730 are monolithic inte- grated circuits with two independent subblocks each consisting of a Hall plate and the corresponding com- parator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sen- sitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the com- parator. The output of comparator 1 (connected to S1) directly controls the Count Output. The outputs of both com- parators enter the Direction Detection Block controlling the state of the Direction Output. The Direction Output is updated at every edge of comparator 1 (rising and falling). The previous state of the Direction Output is maintained between two edges of the Count Output and in case the edges at comparator 1 and comparator 2 occur in the same clock period. The sub- blocks are designed to have closely matched switching points. The temperature-dependent bias – common to both subblocks – increases the supply voltage of the Hall plates and adjusts the switching points to the decreas- ing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the com- parator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. In order to achieve good matching of the switching points of both subblocks, the magnetic offset caused by mechanical stress is compensated for by use of switching offset compensation techniques. Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the output pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. Fig. 2–1: HAL 710 timing diagram with respect to the clock phase Fig. 2–2 and Fig. 2–3 on page 7 show how the output signals are generated by the HAL 710 and the HAL 730. The magnetic flux density at the locations of the two Hall plates is shown by the two sinusodial curves at the top of each diagram. The magnetic switching points are depicted as dashed lines for each Hall plate separately. At the time t = 0, the signal S2 precedes the signal S1. The Direction Output is in the correct state according to the definition of the sensor type. When the phase of the magnetic signal changes its sign, the Direction-Output switches its state with the next signal edge of the Count Output. Idd t Direction t VOH VOL Count t VOH VOL BS2 t BS2on Clock t 1/fosc tf Output Output BS1 BS1on Idd |
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