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74LVC595APW 数据表(PDF) 5 Page - NXP Semiconductors

部件名 74LVC595APW
功能描述  8-bit serial-in/serial-out or parallel-out shift register; 3-state
PDF  19 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

74LVC595APW 数据表(HTML) 5 Page - NXP Semiconductors

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74LVC595A_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 29 May 2007
5 of 19
NXP Semiconductors
74LVC595A
8-bit serial-in/serial-out or parallel-out shift register; 3-state
7.
Functional description
[1]
H = HIGH voltage state;
L = LOW voltage state;
↑ = LOW-to-HIGH transition;
X = don’t care;
NC = no change;
Z = high-impedance OFF-state.
8.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For SO16 packages: above 70
°C the value of Ptot derates linearly with 8 mW/K.
For TSSOP16 packages: above 60
°C the value of Ptot derates linearly with 5.5 mW/K.
For DHVQFN16 packages: above 60
°C the value of Ptot derates linearly with 4.5 mW/K.
Table 3.
Function table[1]
Input
Output
Function
SHCP STCP OE
MR
DS
Q7S
Qn
X
X
L
L
X
L
NC
a LOW-state on MR only affects the shift register
X
L
L
X
L
L
empty shift register loaded into storage register
X
X
H
L
X
L
Z
shift register clear; parallel outputs in high impedance OFF-state
X
L
H
H
Q6S
NC
logic HIGH-state shifted into shift register stage 0. Contents of all
shift register stages shifted through, e.g. previous state of stage 6
(internal Q6S) appears on the serial output (Q7S).
X
L
H
X
NC
QnS
contents of shift register stages (internal QnS) are transferred to
the storage register and parallel output stages
↑↑
L
H
X
Q6S
QnS
contents of shift register shifted through; previous contents of the
shift register is transferred to the storage register and the parallel
output stages
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+6.5
V
IIK
input clamping current
VI <0 V
−50
-
mA
VI
input voltage
[1]
−0.5
+6.5
V
IOK
output clamping current
VO >VCC or VO <0 V
-
±50
mA
VO
output voltage
3-state
[1]
−0.5
6.5
V
output HIGH or LOW state
[1]
−0.5
VCC + 0.5
V
IO
output current
VO =0 VtoVCC
-
±50
mA
ICC
supply current
-
100
mA
IGND
ground current
−100
-
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power dissipation
Tamb = −40 °C to +125 °C
[2] -
500
mW



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