74LVC595APW datasheet(9/19 Pages) NXP

9 / 19 page

74LVC595A_1

Product data sheet

Rev. 01 — 29 May 2007

9 of 19

NXP Semiconductors

74LVC595A

8-bit serial-in/serial-out or parallel-out shift register; 3-state

[1]

Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, and 3.3 V respectively.

[2]

tpd is the same as tPLH and tPHL.

[3]

ten is the same as tPZH and tPZL.

[4]

tdis is the same as tPHZ and tPLZ.

[5]

Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design.

[6]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

∑(C

L × VCC

× f

o) = sum of outputs.

hold time

DS to SHCP; see Figure 9

VCC = 1.65 V to 1.95 V

1.5

0.2

2.0

VCC = 2.3 V to 2.7 V

1.5

0.1

2.0

VCC = 2.7 V

1.5

−0.1

2.0

VCC = 3.0 V to 3.6 V

1.0

−0.2

1.5

trec

recovery time

MR to SHCP; see Figure 11

VCC = 1.65 V to 1.95 V

5.0

−2.7

5.5

VCC = 2.3 V to 2.7 V

4.0

−1.5

4.5

VCC = 2.7 V

2.0

−1.0

2.5

VCC = 3.0 V to 3.6 V

2.0

−1.0

2.5

fmax

maximum

frequency

SHCP or STCP; see Figure 7

and Figure 8

VCC = 1.65 V to 1.95 V

130

MHz

VCC = 2.3 V to 2.7 V

100

140

MHz

VCC = 2.7 V

110

150

100

MHz

VCC = 3.0 V to 3.6 V

130

180

115

MHz

tsk(o)

output skew time

VCC = 3.0 V to 3.6 V

[5]

1.0

1.5

CPD

power dissipation

capacitance

VI = GND to VCC

[6]

VCC = 1.65 V to 1.95 V

VCC = 2.3 V to 2.7 V

VCC = 3.0 V to 3.6 V

Table 7.

Dynamic characteristics …continued

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 13.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

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