EP7311 datasheet(13/58 Pages) CIRRUS

13 / 58 page

DS506F1

©Copyright Cirrus Logic, Inc. 2005

EP7311

High-Performance, Low-Power System on Chip

ELECTRICAL SPECIFICATIONS

Absolute Maximum Ratings

Recommended Operating Conditions

DC Characteristics

All characteristics are specified at VDDCORE = 2.5 V, VDDIO = 3.3 V and VSS = 0 V over an operating temperature of 0°C to +70°C

for all frequencies of operation. The current consumption figures have test conditions specified per parameter.”

DC Core, PLL, and RTC Supply Voltage

2.9 V

DC I/O Supply Voltage (Pad Ring)

3.6 V

DC Pad Input Current

±10 mA/pin; ±100 mA cumulative

Storage Temperature, No Power

–40

°C to +125°C

DC core, PLL, and RTC Supply Voltage

2.5 V

± 0.2 V

DC I/O Supply Voltage (Pad Ring)

2.3 V - 3.5 V

DC Input / Output Voltage

O–I/O supply voltage

Operating Temperature

Extended -20

°C to +70°C; Commercial 0°C to +70°C;

Industrial -40

°C to +85°C

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

VIH

CMOS input high voltage

0.65

× VDDIO

VDDIO + 0.3

VDDIO = 2.5 V

VIL

CMOS input low voltage

VSS − 0.3

0.25

× VDDIO

VDDIO = 2.5 V

VT+

Schmitt trigger positive going

threshold

2.1

VT-

Schmitt trigger negative going

threshold

0.8

Vhst

Schmitt trigger hysteresis

0.1

0.4

VIL to VIH

VOH

CMOS output high voltagea

Output drive 1a

Output drive 2a

VDD – 0.2

2.5

IOH = 0.1 mA

IOH = 4 mA

IOH = 12 mA

VOL

CMOS output low voltagea

Output drive 1a

Output drive 2a

0.3

0.5

IOL = –0.1 mA

IOL = –4 mA

IOL = –12 mA

IIN

Input leakage current

1.0

µA

VIN = VDD or GND

IOZ

Bidirectional 3-state leakage

currentb c

100

µA

VOUT = VDD or GND

CIN

Input capacitance

10.0

COUT

Output capacitance

10.0

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