ACST6_09 datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Characteristics

ACST6

4/15

Doc ID 7297 Rev 9

Figure 4.

On-state rms current versus

ambient temperature (free air

convection, full cycle)

Figure 5.

Relative variation of thermal

impedance versus pulse duration

Figure 6.

Relative variation of gate trigger

current (IGT) and voltage (VGT)

versus junction temperature

Figure 7.

Relative variation of holding

current (IH) and latching current (IL)

versus junction temperature

Figure 8.

Surge peak on-state current

versus number of cycles

Figure 9.

Non repetitive surge peak on-state

current and corresponding value of

I2t versus sinusoidal pulse width

IT(RMS)(A)

Ta(°C)

0.0

0.5

1.0

1.5

2.0

2.5

100

125

α=180°

D2PAK with

copper

surface = 1

cm2

TO-220FPAB

TO220AB

I2PAK

K = [Zth / Rth]

1.0E-02

1.0E-01

1.0E+00

tp(s)

1.0E-03

1.0E-01

1.0E+01

1.0E+03

Zth(j-c)

Zth(j-a)

TO-220AB

D²PAK

I²PAK

TO-220FPAB

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

100

125

IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C]

Tj (°C)

IGT Q3

IGT Q1-Q2

Q1-Q2-Q3

(typical values)

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

100

125

IH,IL[Tj] / IH,IL[Tj = 25 °C]

Tj(°C)

(typical values)

ITSM(A)

Number of cycles

100

1000

Number of cycles

Repetitive

TC =106 °C

Non repetitive

Tj initial = 25 °C

One cycle

t = 20 ms

100

1000

0.01

0.10

1.00

10.00

dl /dt limitation: 100 A / µs

Tj initial = 25 °C

ITSM

I²t

ITSM(A), I²t (A²s)

tp(ms)

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