ACST6

Characteristics

Doc ID 7297 Rev 9

5/15

Figure 10.

On-state characteristics

(maximum values)

Figure 11.

Relative variation of critical rate of

versus junction temperature

1

10

100

01

2

3

4

5

ITM(A)

VTM(V)

Tjmax:

Vto = 0.90 V

Rd = 80 mΩ

Tj = 125 °C

Tj = 25 °C

0

1

2

3

4

5

6

7

8

25

50

75

100

125

(dl/dt)c [Tj] / (dl/dt)c[Tj = 125 °C]

Tj(°C)

Figure 12.

Relative variation of static dV/dt

immunity versus junction

temperature (gate open)

Figure 13.

Relative variation of leakage

current versus junction

temperature

0

1

2

3

4

5

6

25

50

75

100

125

dV/dt [Tj] / dV/dt [Tj = 125 °C]

Tj(°C)

VD =VR = 536 V

25

50

75

100

125

IDRM/IRRM [Tj;VDRM /VRRM] / IDRM/IRRM[Tj = 125 °C; 800 V]

1.0E-03

1.0E-02

1.0E-01

1.0E+00

Tj(°C)

VDRM =VRRM = 200 V

VDRM =VRRM = 600 V

VDRM =VRRM = 800V

Different blocking voltages

Figure 14.

Relative variation of clamping

temperature (minimum values)

Figure 15.

Thermal resistance junction to

ambient versus copper surface

under tab

V[Tj] / V [Tj = 25 °C]

CL

CL

0.85

0.90

0.95

1.00

1.05

1.10

1.15

-50

-25

0

25

50

75

100

125

Tj(°C)

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

D²PAK

Printed circuit board FR4,

copper thickness = 35 µm

Rth(j-a)(°C/W)